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  Datasheet File OCR Text:
 SMD Type
Transistors
PNP Silicon Power Switching Transistor FCX790A
Features
2W power dissipation. 6A peak pulse current. Excellent HFE characteristics. Low saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -50 -40 -5 -6 -2 1 -55 to +150 Unit V V V A A W
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1
SMD Type
FCX790A
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector-base cut-off current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter ON voltage * Symbol V(BR)CBO IC=-100iA V(BR)CEO IC=-10mA V(BR)EBO IE=-100iA ICBO IEBO VCB=-10V VEB=-4V Testconditons
Transistors
Min -50 -40 -5
Typ
Max
Unit V V V
0.1 0.1 -250 -350 -450 -0.9 -0.8 300 250 200 150 100 225 24 35 600 800
iA iA mV V V
IC=-0.5A, IB=-5mA VCE(sat) IC=-1A, IB=-10mA IC=-2A, IB=-50mA VBE(sat) IC=-1A, IB=-10mA VBE(on) IC=-1A, VCE=-2V IC=-10mA,VCE=-2V IC=-500mA,VCE=-2V IC=-1A,VCE=-2V IC=-2A,VCE=-2V IC=-50mA, VCE=-5V, f=50MHz VEB=0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA
Static Forward Current Transfer Ratio *
hFE
Transitional frequency Input capacitance Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 is; d 0.02.
fT Cibo Cobo t(on) t(off)
MHz pF pF ns ns
Marking
Marking 790
2
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